CPC H01M 4/366 (2013.01) [H01M 4/133 (2013.01); H01M 4/137 (2013.01); H01M 4/38 (2013.01); H01M 4/587 (2013.01); H01M 4/602 (2013.01); H01M 4/625 (2013.01); B82Y 30/00 (2013.01); C01P 2004/64 (2013.01); H01B 1/18 (2013.01); H01B 1/24 (2013.01); H01M 4/134 (2013.01); H01M 4/1393 (2013.01); H01M 4/1395 (2013.01); H01M 4/386 (2013.01); H01M 4/387 (2013.01); H01M 10/0525 (2013.01); Y02E 60/10 (2013.01); Y02T 10/70 (2013.01); Y10S 977/773 (2013.01)] |
AS A RESULT OF REEXAMINATION, IT HAS BEEN DETERMINED THAT: |
The patentability of claims 1-3 and 6-27 is confirmed. |
Claims 4-5 were not reexamined. |
1. A method of manufacture, comprising:
producing a composite Si-C particle comprising one or more internal Si nanoparticles,
wherein the one or more internal Si nanoparticles are deposited from a gaseous material comprising Si and H, and
wherein the one or more internal Si nanoparticles comprise 15 wt. % to 90 wt. % of the composite Si-C particle.
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