Class 326 | ELECTRONIC DIGITAL LOGIC CIRCUITRY |
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1 | SUPERCONDUCTOR (E.G., CRYOGENIC, ETC.) |
2 | Tunneling device |
7 | Function of AND, OR, NAND, NOR, or NOT |
8 | SECURITY (E.G., ACCESS OR COPY PREVENTION, ETC.) |
9 | RELIABILITY |
16 | WITH TEST FACILITATING FEATURE |
17 | ACCELERATING SWITCHING |
21 | SIGNAL SENSITIVITY OR TRANSMISSION INTEGRITY |
22 | Input noise margin enhancement |
26 | Output switching noise reduction |
29 | Pulse shaping (e.g., squaring, etc.) |
30 | Bus or line termination (e.g., clamping, impedance matching, etc.) |
31 | Signal level or switching threshold stabilization |
35 | THRESHOLD (E.G., MAJORITY, MINORITY, OR WEIGHTED INPUTS, ETC.) |
37 | MULTIFUNCTIONAL OR PROGRAMMABLE (E.G., UNIVERSAL, ETC.) |
38 | Having details of setting or programming of interconnections or logic functions |
39 | Array (e.g., PLA, PAL, PLD, etc.) |
40 | With flip-flop or sequential device |
41 | Significant integrated structure, layout, or layout interconnections |
42 | Bipolar transistor |
44 | Field-effect transistor |
46 | Sequential (i.e., finite state machine) or with flip-flop |
47 | Significant integrated structure, layout, or layout interconnections |
48 | Bipolar transistor |
49 | Field-effect transistor |
51 | INHIBITOR |
52 | EXCLUSIVE FUNCTION (E.G., EXCLUSIVE OR, ETC.) |
56 | TRI-STATE (I.E., HIGH IMPEDANCE AS THIRD STATE) |
59 | THREE OR MORE ACTIVE LEVELS (E.G., TERNARY, QUATENARY, ETC.) |
61 | INSULATED GATE CHARGE TRANSFER DEVICE |
62 | INTERFACE (E.G., CURRENT DRIVE, LEVEL SHIFT, ETC.) |
63 | Logic level shifting (i.e., interface between devices of different logic families) |
64 | Bi-CMOS |
68 | Field-effect transistor (e.g., JFET, MOSFET, etc.) |
69 | ECL to/from GaAs FET (e.g., MESFET, etc.) |
70 | TTL to/from MOS |
73 | ECL to/from MOS |
74 | ECL to/from TTL |
75 | Bipolar transistor |
80 | Supply voltage level shifting (i.e., interface between devices of a same logic family with different operating voltage levels) |
82 | Current driving (e.g., fan in/out, off chip driving, etc.) |
93 | CLOCKING OR SYNCHRONIZING OF LOGIC STAGES OR GATES |
99 | HAVING LOGIC LEVELS CONVEYED BY SIGNAL FREQUENCY OR PHASE |
100 | INTEGRATED INJECTION LOGIC |
101 | SIGNIFICANT INTEGRATED STRUCTURE, LAYOUT, OR LAYOUT INTERCONNECTIONS |
104 | FUNCTION OF AND, OR, NAND, NOR, OR NOT |
105 | Decoding |
109 | Bipolar and FET |
111 | Space discharge device (e.g., vacuum tube, etc.) |
112 | Field-effect transistor (e.g., JFET, etc.) |
113 | Pass transistor logic or transmission gate logic |
114 | Wired logic (e.g., wired-OR, wired-AND, dotted logic, etc.) |
115 | Source-coupled logic (e.g., current mode logic (CML), differential current switch logic (DCSL), etc.) |
116 | Schottky-gate FET (i.e., MESFET) |
119 | MOSFET (i.e., metal-oxide semiconductor field-effect transistor) |
122 | Complementary FETs |
123 | With semiconductor diode or negative resistance device |
124 | Bipolar transistor (e.g., RTL, DCTL, etc.) |
125 | Wired logic or open collector logic (e.g., wired-OR, wired-AND, dotted logic, etc.) |
126 | Emitter-coupled or emitter-follower logic |
128 | Transistor-transistor logic (TTL) |
130 | Diode-transistor logic (DTL) |
132 | With negative resistance device (e.g., tunnel diode, thyristor, etc.) |
133 | Diode |
135 | Negative resistance device |
136 | MISCELLANEOUS |
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