| Class 365 | STATIC INFORMATION STORAGE AND RETRIEVAL |
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![[List of Pre Grant Publications for class 365 subclass 1]](../as.gif) | ![[List of Patents for class 365 subclass 1]](../ps.gif) | 1 | MAGNETIC BUBBLES |
| | 2 |  Disposition of elements |
| | 4 | Decoder |
| | 5 | Logic |
| | 6 | Rotating field circuits |
| | 7 | Detectors |
| | 11 | Generators |
| | 13 | Plural interacting paths |
| | 19 | Conductor propagation |
| | 22 | One's and zero's |
| | 23 | Plural direction propagation |
| | 25 | Velocity |
| | 27 | Bias |
| | 29 | Strip domain |
| | 30 | In-plane field (nonrotating) |
| | 31 | Different size bubbles |
| | 32 | Multiple magnetic layer |
| | 33 | Magnetic storage material |
| | 35 | Guide structure |
| | 185.01 | FLOATING GATE |
| | 185.02 | Disturbance control |
| | 185.03 | Multiple values (e.g., analog) |
| | 185.04 | Data security |
| | 185.05 | Particular connection |
| | 185.06 |  Segregated columns |
| | 185.07 | Cross-coupled cell |
| | 185.08 | With volatile signal storage device |
| | 185.09 | Error correction (e.g., redundancy, endurance) |
| | 185.1 | Extended floating gate |
| | 185.11 | Bank or block architecture |
| | 185.14 | Program gate |
| | 185.16 | Virtual ground |
| | 185.17 | Logic connection (e.g., NAND string) |
| | 185.18 | Particular biasing |
| | 185.19 | Multiple pulses (e.g., ramp) |
| | 185.2 | Reference signal (e.g., dummy cell) |
| | 185.23 | Drive circuitry (e.g., word line driver) |
| | 185.24 | Threshold setting (e.g., conditioning) |
| | 185.25 | Line charging (e.g., precharge, discharge, refresh) |
| | 185.26 | Floating electrode (e.g., source, control gate, drain) |
| | 185.27 | Substrate bias |
| | 185.28 | Tunnel programming |
| | 185.29 | Erase |
| | 45 | ANALOG STORAGE SYSTEMS |
| | 49.1 | ASSOCIATIVE MEMORIES (CONTENT ADDRESSABLE MEMORY-CAM) |
| | 49.11 | Flip-Flop |
| | 49.12 | Capacitor cell |
| | 49.13 | Ferroelectric cell |
| | 50 | Magnetic cell |
| | 49.15 | Auxiliary lines |
| | 49.16 | Segmented/partitioned of cells |
| | 49.17 | Compare/Search/Match circuit |
| | 49.18 | Priority encoders |
| | 51 | FORMAT OR DISPOSITION OF ELEMENTS |
| | 52 | HARDWARE FOR STORAGE ELEMENTS |
| | 63 | INTERCONNECTION ARRANGEMENTS |
| | 73 | RECIRCULATION STORES |
| | 78 | PLURAL SHIFT REGISTER MEMORY DEVICES |
| | 80 | MAGNETIC SHIFT REGISTERS |
| | 81 | Bidirectional |
| | 82 | Two cells per bit |
| | 83 | SiPo/PiSo |
| | 84 | Core in transfer loop |
| | 85 | Continuous |
| | 87 | Thin film |
| | 89 | Logic |
| | 90 | Multiaperture cell |
| | 93 | Including delay means |
| | 94 | READ ONLY SYSTEMS (I.E., SEMIPERMANENT) |
| | 95 | With override (i.e., latent images) |
| | 96 | Fusible |
| | 97 | Magnetic |
| | 100 | Resistive |
| | 101 | Inductive |
| | 102 | Capacitative |
| | 103 | Semiconductive |
| | 106 | RADIANT ENERGY |
| | 107 | Chemical fluids |
| | 108 | Liquid crystal |
| | 109 | Photoconductive and ferroelectric |
| | 110 | Electroluminescent and photoconductive |
| | 111 | Electroluminescent |
| | 112 | Photoconductive |
| | 113 | Amorphous |
| | 114 | Semiconductive |
| | 116 | Plasma |
| | 117 | Ferroelectric |
| | 118 | Electron beam |
| | 119 | Color centers |
| | 120 | INFORMATION MASKING |
| | 121 | Polarization |
| | 123 | Bragg cells |
| | 124 | Diffraction |
| | 126 | Thermoplastic |
| | 127 | Transparency |
| | 128 | Electron beams |
| | 129 | SYSTEMS USING PARTICULAR ELEMENT |
| | 130 | Three-dimensional magnetic array |
| | 131 | Two magnetic cells per bit |
| | 132 | Different size cores |
| | 133 | Cells of diverse coercivity |
| | 134 | Continuous cells |
| | 140 | Multiaperture cell |
| | 145 | Ferroelectric |
| | 146 | Electrets |
| | 147 | Persistent internal polarization (PIP) |
| | 148 | Resistive |
| | 149 | Capacitors |
| | 151 | Molecular or atomic |
| | 153 | Electrochemical |
| | 154 | Flip-flop (electrical) |
| | 157 | Magnetostrictive or piezoelectric |
| | 158 | Magnetoresistive |
| | 159 | Negative resistance |
| | 160 | Superconductive |
| | 163 | Amorphous (electrical) |
| | 164 | Electrical contacts |
| | 167 | Simulating biological cells |
| | 168 | Ternary |
| | 169 | Gunn effect |
| | 170 | Hall effect |
| | 171 | Magnetic thin film |
| | 174 | Semiconductive |
| | 189.011 | READ/WRITE CIRCUIT |
| | 189.02 | Multiplexing |
| | 189.03 | Plural use of terminal |
| | 189.04 | Simultaneous operations (e.g., read/write) |
| | 189.14 | Common read and write circuit |
| | 189.15 | Particular read circuit |
| | 189.16 | Particular write circuit |
| | 189.17 | Data transfer circuit |
| | 189.18 | Bidirectional bus |
| | 189.19 | Separate read and write bus |
| | 189.2 | Using different memory types |
| | 189.05 | Having particular data buffer or latch |
| | 189.06 | Including signal clamping |
| | 189.07 | Including signal comparison |
| | 189.08 | Including specified plural element logic arrangement |
| | 189.09 | Including reference or bias voltage generator |
| | 189.11 | Including level shift or pull-up circuit |
| | 189.12 | With shift register |
| | 190 | For complementary information |
| | 191 | Signals |
| | 192 | Radio frequency |
| | 193 | Strobe |
| | 194 | Delay |
| | 195 | Inhibit |
| | 197 | Microwave |
| | 198 | Transmission |
| | 199 | Coincident A.C. signal with pulse |
| | 200 | Bad bit |
| | 201 | Testing |
| | 202 | Complementing/balancing |
| | 203 | Precharge |
| | 204 | Accelerating charge or discharge |
| | 205 | Flip-flop used for sensing |
| | 206 | Noise suppression |
| | 207 | Differential sensing |
| | 208 | Semiconductors |
| | 209 | Magnetic |
| | 210.1 | Reference or dummy element |
| | 210.11 |  Compensate signal |
| | 210.12 | Voltage setting |
| | 210.13 | Common bit line |
| | 210.14 | Plural elements per reference cell |
| | 210.15 | Structural component of a reference cell |
| | 211 | Temperature compensation |
| | 214 | Particular wiring |
| | 215 | Optical |
| | 217 | Electron beam |
| | 218 | Erase |
| | 219 | SiPo/PiSo |
| | 220 | Parallel read/write |
| | 221 | Serial read/write |
| | 222 | Data refresh |
| | 223 | Bridge |
| | 224 | Eddy current |
| | 225 | Minor loop |
| | 225.5 | Including magnetic element |
| | 225.6 | Having bipolar circuit element |
| | 225.7 | Having fuse element |
| | 226 | POWERING |
| | 230.01 | ADDRESSING |
| | 230.02 | Multiplexing |
| | 230.03 | Plural blocks or banks |
| | 230.05 | Multiple port access |
| | 230.06 | Particular decoder or driver circuit |
| | 230.08 | Including particular address buffer or latch circuit arrangement |
| | 230.09 | Combined random and sequential addressing |
| | 231 | Using selective matrix |
| | 233.1 | Sync/clocking |
| | 233.11 | Plural clock signals |
| | 233.12 | External clock signal modification |
| | 233.13 | DDR (double data rate) memory |
| | 233.14 | Initiating signal |
| | 233.15 | Standby signal |
| | 233.16 | Write mode signal only |
| | 233.17 | Read mode signal only |
| | 233.18 | Burst mode signal |
| | 233.19 | Common read and write mode signal |
| | 233.5 | Transition detection |
| | 234 | Optical |
| | 236 | Counting |
| | 237 | Electron beam |
| | 238 | Cartesian memories |
| | 238.5 | Byte or page addressing |
| | 239 | Sequential |
| | 242 | Current steering |
| | 243.5 | Including magnetic element |
| | 244 | MISCELLANEOUS |
| FOREIGN ART COLLECTIONS | ||
| FOR000 | CLASS-RELATED FOREIGN DOCUMENTS |
| Any foreign patents or nonpatent literature from subclasses that have been reclassified have been transferred directly to FOR Collection listed below. These Collections contain ONLY foreign patents or nonpatent literature. Parenthetical references in the Collection titles refer to the abolished subclasses from which these Collections were derived. | ||
| FOR100 | ASSOCIATIVE MEMORIES (365/49) |
| FOR101 | READ/WRITE CIRCUIT (365/189.01) |
| ADDRESSING (365/230.01) |