![[Search a list of Patent Appplications for class 365]](../as.gif) CLASS 365, | STATIC INFORMATION STORAGE AND RETRIEVAL |
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SECTION I - CLASS DEFINITION
This is the generic class for apparatus or corresponding processes for the static storage and retrieval of information. For classification herein, the storage system must be (1) static, (2) a singular storage element or plural elements of the same type, (3) addressable.
| (1) Note. Static storage and retrieval of information within this class means that relative motion is not required between the storage element and the source, receiver, or transducer. For dynamic storage and retrieval or magnetic information, see References to Other Classes, below. |
| (2) Note. The storage elements within this class are plural elements of the same type which may store one or more bits of information per element. |
| (3) Note. The storage system must be addressable, that is, there must be an inherent means for writing information into a memory and a means for reading the same information from the memory. For switching systems, selective systems, card readers, and recorders, see References to Other Classes, below. Static memory systems involving data processing techniques are classified elsewhere. |
SECTION II - LINES WITH OTHER CLASSES AND WITHIN THIS CLASS
A. This class includes static memory systems wherein the information stored in the memory element has electrical, magnetic, or optical properties. This class excludes mechanical or fluidic type storage of information, e.g., card files, cams, levels, or fluids, etc. This class also excludes the storage of noninformation, e.g., energy, basic signal control means, etc.
B. Processes for the manufacturing of storage elements are not classified within this class. See appropriate classes in References To Other Classes, below.
C. Storage Signals, per se, are not classified herein. (See appropriate classes in the References To Other Classes, below.)
D. Circuits not specific to storage and retrieval which may constitute subcombinations of such apparatus are classified in the appropriate class for such circuits, e.g., photosensitive devices. See References to Other Classes, below.
E. The combination of the subject matter of this class and an art environment is classified with the art environment.
F. For static storage and retrieval systems, devices, and arrangements found in other classes: see appropriate classes in Reference To Other Classes, below.
G. The organization of this class can be found in Subclass References to the Current Class, below.
SECTION III - SUBCLASS REFERENCES TO THE CURRENT CLASS
SEE OR SEARCH THIS CLASS, SUBCLASS:
| 1, | through 44, for magnetic bubble devices. |
| 45, | 48, analog storage systems, for devices where the information stored is not digital in nature. |
| 49.1, | through 243.5, digital storage systems, for devices where the information is discrete. |
| 244, | for subject matter not found above. |
SECTION IV - REFERENCES TO OTHER CLASSES
SEE OR SEARCH CLASS:
| 29, | Metal Working, for method of assembling storage elements. (See Lines With Other Classes, Section B.) |
| 29, | Metal Working, subclass 25.35 for method of making piezoelectric devices, subclass 737 for apparatus to assemble magnetic memory devices, subclasses 25.01+ for making of barrier layer device, subclasses 592.1+ for processes of mechanical manufacturing electrical devices. (See Lines With Other Classes F.) |
| 74, | Machine Element or Mechanism, subclasses 568+ for mechanical storage elements. (See Lines Other Classes, F.) |
| 148, | Metal Treatment, for metal stock materials usable as storage elements. (See Lines With Other Classes, B.) |
| 156, | Adhesive Bonding and Miscellaneous Chemical Manufacture, for bonding together storage element materials. (See Lines With Other Classes, B.) |
| 174, | Electricity: Conductors and Insulators, subclasses 250+ for printed circuit elements which are storage panels. (See Lines With Other Classes, F .) |
| 178, | Telegraphy, subclass 112 for static information stored in the form of a perforated tape. (See Lines With Other Classes, F.) |
| 194, | Check-Actuated Control Mechanisms, mechanical storage of a check. (See Lines With Other Classes, F.) |
| 205, | Electrolysis: Processes, Compositions Used Therein, and Methods of Preparing the Compositions, subclass 68 for process of record matrix forming. (See Lines With Other Classes, F.) |
| 209, | Classifying, Separating, and Assorting Solids, subclasses 212+ for separating components by magnetic repulsion wherein a magnetic pin position may be indicative of information. (See Lines With Other Classes, F.) |
| 235, | Registers, subclasses 435+ for card readers. |
| 235, | Registers, subclasses 435+ for coded record sensors, subclass 493 for magnetic records. (See Lines With Other Classes, F.) |
| 250, | Radiant Energy, subclass 550 for holographic interference pattern analysis, subclass 553 for a matrix of solid-state light sources. (See Lines With Other Classes, F.) |
| 250, | Radiant Energy, for radiant energy. (See Lines With Other Classes, D, above.) |
| 252, | Compositions, subclasses 62.51+ for magnetic compositions used as a storage medium. (See Lines With Other Classes, F.) |
| 257, | Active Solid-State Devices (e.g., Transistors, Solid-State Diodes), appropriate subclasses, including subclasses 225 , 260, 390, 391, 903, 904, and 910 for solid-state static memory or memory element structure, per se. (See Lines With Other Classes, C.) |
| 257, | Active Solid-State Devices (e.g., Transistors, Solid-State Diodes), appropriate subclasses, including subclasses 225 , 260, 390, 391, 903, 904, and 910 for solid-state static memory or memory element structure. (See Lines With Other Classes, F.) |
| 307, | Electrical Transmission or Interconnection Systems, subclasses 401+ for saturable reactor systems which include thin film parametrons, logic circuits, electrets, per se, which are switching type devices, rather than storage of information devices and subclass 109 for systems having a capacitor. (See Lines With Other Classes, F.) |
| 307, | Electrical Transmission or Interconnection Systems, subclasses 112+ for switching systems. |
| 310, | Electrical Generator or Motor Structure, subclasses 311+ for piezoelectric device, F). |
| 313, | Electric Lamp and Discharge Devices, for a cathode-ray tube (CRT) type storage tube. (See Lines With Other Classes, C.) |
| 313, | Electric Lamp and Discharge Devices, subclasses 391+ for cathode-ray tube storage devices. (See Lines With Other Classes, F.) |
| 315, | Electric Lamp and Discharge Devices: Systems, for a CRT type storing system. (See Lines With Other Classes, C.) |
| 315, | Electric Lamp and Discharge Devices: Systems, subclass 8.51 for cathode-ray tube storing systems, subclass 84.51 for discharge device systems which store electrical pulse energy for later retrieval. (See Lines With Other Classes, F.) |
| 320, | Electricity: Battery or Capacitor Charging or Discharging, subclasses 166+ for a battery or capacitor charging or discharging circuit. (See Lines With Other Classes, F.) |
| 324, | Electricity: Measuring and Testing, subclasses 43+ for magnetic field testing means, subclasses 111+ for storage of voltages and currents; and subclasses 210+ for testing of magnetic memory elements, per se. (See Lines With Other Classes, F.) |
| 326, | Electronic Digital Logic Circuitry, appropriate subclasses for digital logic devices. (See Lines With Other Classes, F.) |
| 326, | Electronic Digital Logic Circuitry, for logic circuits. (See Lines With Other Classes, D, above.) |
| 327, | Miscellaneous Active Electrical Nonlinear Devices, Circuits, and Systems, subclasses 545+ for miscellaneous bias circuits with signal protection or bias preservation. (See Lines With Other Classes, C.) |
| 327, | Miscellaneous Active Electrical Nonlinear Devices, Circuits, and Systems, particularly subclasses 199+ for miscellaneous bistable circuits and subclasses 365+ for miscellaneous gating circuits. (See Lines With Other Classes, F.) |
| 330, | Amplifiers, subclasses 4+ for laser type amplifiers having utility in information storage. (See Lines With Other Classes, F.) |
| 330, | Amplifiers, for amplifiers. (See Lines With Other Classes, D, above.) |
| 333, | Wave Transmission Lines and Networks, subclass 4 for plural channel systems with balanced circuits, subclasses 124+ for impedance matching devices, subclass 12 for transmission lines, subclasses 138+ for delay means, subclass 32 for coupling means which include impedance matching means, subclasses 170+ for wave filters with bridge means, subclasses 213+ for negative resistance networks. (See Lines With Other Classes, F.) |
| 335, | Electricity: Magnetically Operated Switches, Magnets, and Electromagnets, subclasses 209+ for magnets and electromagnets, per se. (See Lines With Other Classes, F.) |
| 336, | Inductor Devices, for an inductor type storage element. (See Lines With Other Classes, C.) |
| 336, | Inductor Devices, appropriate subclass for storage element which are inductors. (See Lines With Other Classes, F.) |
| 338, | Electrical Resistors, subclass 32 for superconductors, per se, having utility as a storage element. (See Lines With Other Classes, F.) |
| 340, | Communications: Electrical, subclasses 1.1 through 16.1for selective systems, particularly subclasses 2.2-2.31 for a channel selecting matrix and subclasses 14.1-14.69 for decoder matrix systems which are used to control a device (see Lines With Other Classes and Within This Class, F in this class (365)); and subclass 146.2 for digital comparator systems. |
| 341, | Coded Data Generation or Conversion, appropriate subclasses for code converters (See Lines With Other Classes, D, above). |
| 345, | Computer Graphics Processing and Selective Visual Display Systems, subclasses 55+ for display elements arranged in matrix. (See Lines With Other Classes, F.) |
| 346, | Recorders, appropriate subclass for recorders. Static memory systems involving data processing techniques are classified elsewhere |
| 346, | Recorders, subclasses 2+ for phenomenal apparatus and processes recording for processes of producing a record in conjunction with the reading of a record, subclasses 74.2+ for magnetically forming a visible image record. (See Lines With Other Classes, F.) |
| 347, | Incremental Printing of Symbolic Information, subclasses 1+ for processes and apparatus for conveying information by selectively creating on a medium a visibly distinguishable symbol or mark composed of a plurality of portions; subclass 113 for thermoplastic marking. (See Lines With Other Classes, F.) |
| 348, | Television, subclasses 714+ for details of static storage device which includes the processing of a video signal. |
| 353, | Optics: Image Projectors, subclasses 25+ for selective data retrieval of stored information viewed by a projection means. (See Lines With Other Classes, F.). |
| 358, | Facsimile and Static Presentation Processing, subclasses 296 through 304for facsimile recording. (See Lines With Other Classes, F.) |
| 359, | Optical: Systems and Elements, subclasses 350+ for infrared and ultraviolet optical elements, subclasses 1+ for holographic records, subclasses 484.01 through 494.01 for polarization devices, and subclasses 290+ for light control by altering an optical medium, surface, or interface (See Lines With Other Classes, F.) |
| 359, | Optical: Systems and Elements, for holographic, polarization, and light control type storage elements. (See Lines With Other Classes, C.) |
| 359, | Optical: Systems and Elements, for optical elements. (See Lines With Other Classes, D, above.) |
| 360, | Dynamic Magnetic Information Storage or Retrieval, subclass 112 for Hall effect; subclasses 114.01-114.1 for reproducing only, using light; and subclasses 313-327.33 and 328 for magnetoresistive, magnetostrictive. |
| 361, | Electricity: Electrical Systems and Devices, for capacitor type storage element. (See Lines With Other Classes, C.) |
| 361, | Electricity: Electrical Systems and Devices, subclasses 160+ for control circuits for relay devices, subclass 271 for electrostatic capacitors, per se, subclass 600 for housings or mounting assemblies with plural diverse electrical components, subclasses 500+ for electrolytic capacitors, per se. (See Lines With Other Classes, F.) |
| 369, | Dynamic Information Storage or Retrieval, for phonograph with a static storage system. (See Lines With Other Classes, E.) |
| 369, | Dynamic Information Storage or Retrieval, appropriate subclasses, subclass 100.1 for the dynamic recording of audio information which may include static storage, particularly subclasses 100+ for photographic storage of information. (See Lines With Other Classes, F.) |
| 370, | Multiplex Communications, for a multiplex system which include static storage of information. (See Lines With Other Classes, E.) |
| 370, | Multiplex Communications, 351 for pathfinding or routing, subclass 395.7 for an ATM network with detail of storage access and control, and subclass 531 for magnetic core for storage in multiplex communications which may include a static memory device. (See Lines With Other Classes, F.) |
| 372, | Coherent Light Generators, appropriate subclasses for laser type oscillators having utility in information storage. (See Lines With Other Classes, Section F.) |
| 377, | Electrical Pulse Counters, Pulse Dividers, or Shift Registers: Circuits and Systems, for electrical counters and shift registers. (See Lines With Other Classes, F.) |
| 399, | Electrophotography, subclass 10 for storage of data on the operation of an electrophotographic device (i.e., log report) and subclass 83 for job mode selection with memory. (See Lines With Other Classes, F.) |
| 420, | Alloys or Metallic Compositions, (see Lines With Other Classes, B.) |
| 427, | Coating Processes, for coating of storage element materials. (See Lines With Other Classes, B.) |
| 427, | Coating Processes, subclasses 62 , 82, and 100 for superconductor, semiconductor, and piezoelectric products produced, respectively, subclasses 127+ for magnetic base or coating processes. (See Lines With Other Classes, F.) |
| 430, | Radiation Imagery Chemistry: Process, Composition, or Product Thereof, appropriate subclasses for radiation imagery chemistry process, composition, or product used as a storage medium. (See Lines With Other Classes, F.) |
| 434, | Education and Demonstration, educational devices which may include the storage and retrieval of information. (See Lines With Other Classes, F.) |
| 438, | Semiconductor Device Manufacturing: Process, for methods of making semiconductor devices. (See Lines With Other Classes, B.) |
| 438, | Semiconductor Device Manufacturing: Process, for methods of making semiconductor devices. (See Lines With Other Classes, F.) |
| 505, | Superconductor Technology: Apparatus, Material, Process, subclasses 150+ for high temperature (Tc 30 K) superconducting devices, particularly subclasses 170+ for static information storage or retrieval. (See Lines With Other Classes, F.) |
| 706, | Data Processing: Artificial Intelligence, subclass 44 for simulating operational functions of living nerve cells. |
| 711, | Electrical Computers and Digital Processing Systems: Memory, subclasses 1+ for addressing combined with specific memory configurations (e.g., extended, expanded, dynamic, etc.), subclasses 100+ for generalized address forming, and subclasses 200+ for generalized storage accessing and control in a digital data processing system. (See Lines With Other Classes, E.) |
| 714, | Error Detection/Correction and Fault Detection/Recovery, subclasses 718+ for diagnostic testing of a memory system and subclasses 763+ for digital data error correction during memory access. (See Lines With Other Classes, F.) |
SUBCLASSES
![[List of Patents for class 365 subclass 1]](../ps.gif) 1 | MAGNETIC BUBBLES: | ||
| This subclass is indented under the class definition. Subject matter where the information stored in a magnetic
medium is a domain bubble (a single walled magnetic domain having an
outer boundary which closes on itself and has a geometry independent
of the boundary of the sheet in which it moves, usually in the form of
a cylinder).
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| 2 | Disposition of elements: | ||||||
| This subclass is indented under subclass 1. Subject matter directed to the physical or spatial arrangement,
packaging, or chip orientation of the magnetic bubbles.
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| 3 | Lattice: |
| This subclass is indented under subclass 2. Subject matter where the bubble lattice consists of a plurality of rows and columns of bubble domains which occupy a spatial arrangement which is determined to a substantial extent by the interaction between the bubbles. | |
| 4 | Decoder: | ||
| This subclass is indented under subclass 1. Subject matter having means to translate one bubble code
to another.
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| 5 | Logic: |
| This subclass is indented under subclass 1. Subject matter wherein a logic function is performed by the bubble domain device. | |
| 6 | Rotating field circuits: | ||||
This subclass is indented under subclass 1. Subject matter wherein drive circuits provide rotating in-plane
magnetic fields in field accessed bubble domain devices.
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| 7 | Detectors: | ||||
| This subclass is indented under subclass 1. Subject matter where magnetic flux representing the bubble
domain information is detected or sensed.
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| 8 | Magnetoresistive: | ||||||
| This subclass is indented under subclass 7. Subject matter where the detector includes an element exhibiting
a magnetoresistive effect and that element and its associated effect
is used to detect or sense magnetic flux from a bubble domain.
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| 9 | Hall effect: | ||||
| This subclass is indented under subclass 7. Subject matter where the detector includes an element exhibiting
Hall effect and that element and its associated effect is used to
detect or sense magnetic flux from a bubble domain.
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| 10 | Optical: | ||
| This subclass is indented under subclass 7. Subject matter wherein the intensity of the flux emanating
from the bubble information is determined by directing a beam of
polarized light at the information location and detecting the rotation
of polarization caused by the flux from a bubble domain.
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| 11 | Generators: | ||
This subclass is indented under subclass 1. Subject matter where the bubble domain is generated or nucleated.
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| 12 | By splitting: |
| This subclass is indented under subclass 11. Subject matter where the bubble domain is generated by splitting (replication) an already existing bubble domain. | |
| 13 | Plural interacting paths: |
| This subclass is indented under subclass 1. Subject matter where a plurality of paths or channels containing bubble domains interact with each other by attraction or repulsion. | |
| 14 | Closed loop: |
| This subclass is indented under subclass 13. Subject matter where the path or channel is in the form of a closed loop. | |
| 15 | Major-minor: |
| This subclass is indented under subclass 14. Subject matter where the path or channel is in the form of a major (main) loop and minor (auxiliary) loop. | |
| 16 | With switch at interacting point: |
| This subclass is indented under subclass 13. Subject matter where there is a switch (conductor, bubble domain, different coercivity overlay, overlay spacing, etc.) in the path or channel for propagating the bubble domain into a particular path or channel. | |
| 17 | Idler switch: |
| This subclass is indented under subclass 16. Subject matter where the switch is of the idler type where a plurality of bubble domains are continuously recirculated until one bubble domain is ejected by an additional bubble domain that has been injected into the idler switch. | |
| 18 | Boundary: |
| This subclass is indented under subclass 13. Subject matter where the bubble domains interact but never cross the boundary located between the paths or channels, the paths or channels may be in the same medium or different mediums. | |
| 19 | Conductor propagation: |
| This subclass is indented under subclass 1. Subject matter where the bubble domains are propagated by energizing conductors associated with the bubble domains. | |
| 20 | Including A.C. signal: |
| This subclass is indented under subclass 19. Subject matter where at least one of the conductors is energized with an alternating current (A.C.) signal. | |
| 21 | Three phase signals: |
| This subclass is indented under subclass 19. Subject matter where a sequence of three conductors are energized by signals 120 out of phase. | |
| 22 | One’s and zero’s: |
| This subclass is indented under subclass 1. Subject matter where the bubble domain information is stored in the medium by its location in relation to a particular element or elements (conductor, overlay, path, or channel, etc.) within the bubble domain device. | |
| 23 | Plural direction propagation: |
| This subclass is indented under subclass 1. Subject matter where a single bubble domain may be propagated in more than a single direction such as forward and reverse, horizontal to vertical, or vice versa. | |
| 24 | Nonsequential: |
| This subclass is indented under subclass 23. Subject matter where the direction of propagation is altered by a nonsequential drive field. | |
| 25 | Velocity: |
| This subclass is indented under subclass 1. Subject matter where the velocity or speed of bubble domain propagation is significant. | |
| 26 | Turns: |
| This subclass is indented under subclass 25. Subject matter where the turns or corners between paths or channels are significant. | |
| 27 | Bias: | ||
This subclass is indented under subclass 1. Subject matter where a magnetic bias field aids in the propagation
of bubble domains.
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| 28 | Variable: |
| This subclass is indented under subclass 27. Subject matter where the magnetic bias field is variable. | |
| 29 | Strip domain: |
| This subclass is indented under subclass 1. Subject matter where the bubble domain is elongated into the form of a strip. | |
| 30 | In-plane field (nonrotating): | ||
This subclass is indented under subclass 1. Subject matter where a magnetic field is provided in the
direction of the plane of the magnetic bubble storage medium.
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| 31 | Different size bubbles: |
| This subclass is indented under subclass 1. Subject matter where there are different size bubbles in the same medium or in different mediums. | |
| 32 | Multiple magnetic layer: |
| This subclass is indented under subclass 1. Subject matter where there are a plurality of storage layers or the combination of a storage layer and a second nonstorage magnetic layer. | |
| 33 | Magnetic storage material: | ||||
This subclass is indented under subclass 1. Subject matter where the particular material or composition
of the storage medium is disclosed.
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| 34 | Amorphous: |
| This subclass is indented under subclass 33. Subject matter where the storage medium is of the amorphous type. | |
| 35 | Guide structure: | ||||
| This subclass is indented under subclass 1. Subject matter where there is an element or elements for
guiding a bubble domain along a path or channel, or a guide
means outside the path or channel for confining the bubble domain
within a particular path, channel, or area.
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| 36 | Ion implantation: | ||
| This subclass is indented under subclass 35. Subject matter where the guide structure is formed by ion
implantation.
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| 37 | Slots or rails: | ||||
This subclass is indented under subclass 35. Subject matter where the guide structure is a groove or
slot in the storage medium or a rail of permalloy on the surface
of the storage medium.
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| 38 | Zigzag: |
| This subclass is indented under subclass 35. Subject matter where the guide structure is shaped in a zigzag fashion. | |
| 39 | Overlays: | ||
This subclass is indented under subclass 35. Subject matter where an overlay of permalloy is used to
guide the bubble domain along a path or channel.
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| 40 | On opposite sides of storage medium: |
| This subclass is indented under subclass 39. Subject matter where the overlays are on both sides of the storage medium. | |
| 41 | Dots: |
| This subclass is indented under subclass 39. Subject matter where the overlay is in the shape of a dot or disc. | |
| 42 | Wedges: |
| This subclass is indented under subclass 39. Subject matter where the overlay is in the shape of a wedge, also known as an angelfish. | |
| 43 | Chevrons: |
| This subclass is indented under subclass 39. Subject matter where the overlay is in the shape of a chevron; chevrons are shaped like sergeant strips. | |
| 44 | Rectangular bars: | ||
This subclass is indented under subclass 39. Subject matter where the overlay is in the shape of a rectangular
bar.
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| 45 | ANALOG STORAGE SYSTEMS: | ||||||||
| This subclass is indented under the class definition. Subject matter in which the signal is a direct or analogous
function of the information or intelligence stored.
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| 46 | Resistive: | ||
| This subclass is indented under subclass 45. Subject matter where the storage element is resistive.
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| 47 | Thermoplastic: | ||||||
| This subclass is indented under subclass 45. Subject matter where the storage element is thermoplastic.
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| 48 | Magnetic: | ||
| This subclass is indented under subclass 45. Subject matter where the storage element is magnetic.
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| 49.1 | ASSOCIATIVE MEMORIES (CONTENT ADDRESSABLE MEMORY-CAM): | ||
This subclass is indented under the class definition. Subject matter wherein the location of the information is
determined by its content rather than by its address.
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| 49.11 | Flip-Flop: |
| This subclass is indented under subclass 49.1. Subject matter wherein the storage element is a bistable logic circuit (i.e., one in which information need not be periodically refreshed). | |
| 49.12 | Capacitor cell: |
| This subclass is indented under subclass 49.1. Subject matter wherein the storage element is a capacitative device (i.e., one in which information need to be periodically refreshed). | |
| 49.13 | Ferroelectric cell: |
| This subclass is indented under subclass 49.1. Subject matter wherein the storage element is a ferroelectric memory cell. | |
| 49.15 | Auxiliary lines: |
| This subclass is indented under subclass 49.1. Subject matter where a line that carries hit/miss signals (match or mismatch signals) in a content addressable memory (CAM) is used for comparison in addition to the lines that carry the bit lines. | |
| 49.16 | Segmented/partitioned of cells: |
| This subclass is indented under subclass 49.1. Subject matter where CAM elements are grouped into segments or partitions. | |
| 49.17 | Compare/Search/Match circuit: |
| This subclass is indented under subclass 49.1. Subject matter including a circuit for comparison of storage data and search data and outputing match/mismatch (hit/miss) signals. | |
| 49.18 | Priority encoders: |
| This subclass is indented under subclass 49.1. Subject matter including means to indicate an order of transmission of search data in a content addressable memory (CAM). | |
| 50 | Magnetic cell: |
| This subclass is indented under subclass 49.1. Subject matter wherein the storage element changes a storage state when a magnetic field is applied. | |
| 51 | FORMAT OR DISPOSITION OF ELEMENTS: | ||||||
| This subclass is indented under the class definition. Subject matter with specific details of the physical or
spatial arrangement of the elements.
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| 52 | HARDWARE FOR STORAGE ELEMENTS: | ||||||||
| This subclass is indented under the class definition. Subject matter having mechanical components or parts which
assist in the operation of the storage element.
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| 53 | Shields: | ||||||||
| This subclass is indented under subclass 52. Subject matter which includes means associated with the
storage device for reducing or preventing electric or magnetic coupling.
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| 54 | Ground plane: |
| This subclass is indented under subclass 52. Subject matter which includes a ground plane as one of the components of the storage device. | |
| 55 | Magnetic: |
| This subclass is indented under subclass 52. Subject matter wherein the storage device is magnetic. | |
| 56 | Spacers: |
| This subclass is indented under subclass 55. Subject matter which includes means associated with a storage device for separating storage elements or components of the storage device. | |
| 57 | Keeper: |
| This subclass is indented under subclass 55. Subject matter which includes a component of the storage device which is made of highly permeable material and is used to focus or concentrate the magnetic flux emanating from the storage device. | |
| 58 | Slot: |
| This subclass is indented under subclass 55. Subject matter where a groove or slot is located within one of the components of the storage device or the storage element itself. | |
| 59 | Embedded conductor: |
| This subclass is indented under subclass 55. Subject matter wherein a conductor is embedded within one of the components of the magnetic device or the magnetic element itself. | |
| 60 | Air gap: |
| This subclass is indented under subclass 55. Subject matter where an air gap or an air gap space filled with a material which has a permeability of about one is located within the storage element, within components associated with the device or between the element and components. | |
| 61 | Hairpin conductor: |
| This subclass is indented under subclass 55. Subject matter where a conductor associated with the storage device has the general shape of a hairpin. | |
| 62 | Permanent magnet: | ||
| This subclass is indented under subclass 55. Subject matter where a permanent magnet is used as a component
in the magnetic storage device.
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| 63 | INTERCONNECTION ARRANGEMENTS: | ||
| This subclass is indented under the class definition. Subject matter having physical paths by which information
is transferred to, from, or between storage elements.
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| 64 | Optical: | ||||||||||
| This subclass is indented under subclass 63. Subject matter in which optical elements or paths are used
to contact storage elements.
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| 65 | Ferroelectric: | ||||||||
| This subclass is indented under subclass 63. Subject matter where the interconnected storage elements
are ferroelectric devices.
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| 66 | Magnetic: |
| This subclass is indented under subclass 63. Subject matter where the storage elements are magnetic devices. | |
| 67 | Plural diagonal: |
| This subclass is indented under subclass 66. Subject matter in which single or plural windings are threaded
or coupled to the magnetic elements at an angle of approximately
45 to the row or columns. For example:
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| 68 | Tree: |
| This subclass is indented under subclass 66. Subject matter where the interconnections of the cells are
shaped as a divergent branching arrangement with each preceding
cell output connected to a plurality of succeeding cells or vice
versa. For example:
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| 69 | Crossover: |
| This subclass is indented under subclass 66. Subject matter where a row (column) of
cells are interconnected to an adjacent row (column) by
mutually crossing over prior to the end of the row (column).
For example:
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| 70 | Woven: |
| This subclass is indented under subclass 66. Subject matter where the magnetic storage cells are interconnected
by windings which are woven as a weft and warp. For example:
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| 71 | Negative resistance: | ||||
| This subclass is indented under subclass 63. Subject matter where the interconnected storage elements
exhibit negative resistance.
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| 72 | Transistors or diodes: | ||||||
| This subclass is indented under subclass 63. Subject matter where the interconnected storage elements
are transistors or diodes.
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| 73 | RECIRCULATION STORES: | ||||||||||
This subclass is indented under the class definition. Subject matter in which the output of a storage element
is connected back to its input, i.e., to
form a storage loop.
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| 74 | Magnetic: | ||
| This subclass is indented under subclass 73. Subject matter where the recirculation storage device uses
magnetic storage elements.
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| 75 | Stepwise: |
| This subclass is indented under subclass 73. Subject matter wherein the information is moved through the memory in a stepwise manner. | |
| 76 | Delay lines: | ||||||
| This subclass is indented under subclass 73. Subject matter wherein the information is moved through
a delay line.
SEE OR SEARCH THIS CLASS, SUBCLASS:
SEE OR SEARCH CLASS:
| |||||||
| 77 | Plural paths: | ||
| This subclass is indented under subclass 73. Subject matter wherein the information is recirculated through
plural paths.
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| |||
| 78 | PLURAL SHIFT REGISTER MEMORY DEVICES: | ||
| This subclass is indented under the class definition. Subject matter in which information flows through two or
more shift registers which are used in a static memory system.
SEE OR SEARCH CLASS:
| |||
| 80 | MAGNETIC SHIFT REGISTERS: | ||
| This subclass is indented under the class definition. Subject matter where information is transferred (shifted) from
one magnetic element to another along an array.
SEE OR SEARCH CLASS:
| |||
| 81 | Bidirectional: |
| This subclass is indented under subclass 80. Subject matter in which information can be shifted forward or backward. | |
| 82 | Two cells per bit: | ||
| This subclass is indented under subclass 80. Subject matter in which two magnetic elements are required
to store a single bit of information.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
| 83 | SiPo/PiSo: | ||
| This subclass is indented under subclass 80. Subject matter where the magnetic shift register has a serial
input with parallel out or vice versa.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
| 84 | Core in transfer loop: |
| This subclass is indented under subclass 80. Subject matter where a magnetic core is located in the transfer loop between the storage elements of the shift register. | |
| 85 | Continuous: | ||
| This subclass is indented under subclass 80. Subject matter having a magnetic shift register where the
magnetic element is composed of a continuous material with a plurality
of storage positions along its length.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
| 86 | Plated wire: |
| This subclass is indented under subclass 85. Subject matter having a continuous magnetic element which is a nonmagnetic wire, ribbon, or tube that is coated with a thin magnetic film. | |
| 87 | Thin film: | ||||
| This subclass is indented under subclass 80. Subject matter having a magnetic shift register where the
device is a thin film cell which has a thickness of approximately
1 to 12,000 angstroms.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||||
| 88 | Domain tip: |
| This subclass is indented under subclass 87. Subject matter where the magnetic element has a domain in the shape of a tear, "lenicular." | |
| 89 | Logic: | ||||||||
This subclass is indented under subclass 80. Subject matter where a magnetic shift register is used as
a logic device.
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| |||||||||
| 90 | Multiaperture cell: | ||||
| This subclass is indented under subclass 80. Subject matter having magnetic shift registers where the
cell contains two or more apertures for storing information.
SEE OR SEARCH THIS CLASS, SUBCLASS:
SEE OR SEARCH CLASS:
| |||||
| 91 | Ladder: |
| This subclass is indented under subclass 90. Subject matter wherein the cell has an array of apertures in the shape of squares or rectangles. | |
| 92 | With other type core: | ||
| This subclass is indented under subclass 90. Subject matter where the magnetic shift register includes
multiaperture cells plus other types of storage cells.
SEE OR SEARCH CLASS:
| |||
| 93 | Including delay means: | ||||||||||||
This subclass is indented under subclass 80. Subject matter where a magnetic shift register includes
a delay network or delay means.
SEE OR SEARCH THIS CLASS, SUBCLASS:
SEE OR SEARCH CLASS:
| |||||||||||||
| 94 | READ ONLY SYSTEMS (I.E., SEMI-PERMANENT): | ||||||||||
This subclass is indented under the class definition. Subject matter in which information stored is not usually
erased, e.g., destructively stored, as
for repetitive readout.
SEE OR SEARCH THIS CLASS, SUBCLASS:
SEE OR SEARCH CLASS:
| |||||||||||
| 95 | With override (i.e., latent images): |
| This subclass is indented under subclass 94. Subject matter wherein the original information may be temporarily overridden, i.e., memory may be operated as read/write with read only information recoverable. | |
| 96 | Fusible: | ||
| This subclass is indented under subclass 94. Subject matter wherein the storage element is a fusible
link.
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| |||
| 97 | Magnetic: |
| This subclass is indented under subclass 94. Subject matter where the rod only memory uses magnetic storage elements. | |
| 98 | Random core: |
| This subclass is indented under subclass 97. Subject matter in which the storage system is composed of a magnetic matrix where some of the intersections have storage elements and other interconnections do not. | |
| 99 | Random writing: |
| This subclass is indented under subclass 97. Subject matter in which the storage system is composed of a magnetic matrix with storage elements at its intersections of which only some are wired. | |
| 100 | Resistive: | ||
| This subclass is indented under subclass 94. Subject matter wherein the storage element is resistive.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
| 101 | Inductive: | ||||
| This subclass is indented under subclass 94. Subject matter wherein the storage element in inductive.
SEE OR SEARCH THIS CLASS, SUBCLASS:
SEE OR SEARCH CLASS:
| |||||
| 102 | Capacitative: | ||
| This subclass is indented under subclass 94. Subject matter wherein the storage element is capacitative.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
| 103 | Semiconductive: | ||||
| This subclass is indented under subclass 94. Subject matter wherein the storage element is a semiconductor.
SEE OR SEARCH THIS CLASS, SUBCLASS:
SEE OR SEARCH CLASS:
| |||||
| 104 | Transistors: |
| This subclass is indented under subclass 103. Subject matter wherein the semiconductor storage element includes one or more transistors. | |
| 105 | Diodes: | ||||
| This subclass is indented under subclass 103. Subject matter wherein the semiconductor storage element
includes one or more diodes.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||||
| 106 | RADIANT ENERGY: | ||||||||||||||||||||||||||||||||
This subclass is indented under the class definition. Subject matter wherein the condition or state of a memory
material or element is altered in accordance with the information
stored.
SEE OR SEARCH THIS CLASS, SUBCLASS:
SEE OR SEARCH CLASS:
| |||||||||||||||||||||||||||||||||
| 107 | Chemical fluids: | ||||||||||||
| This subclass is indented under subclass 106. Subject matter wherein the memory material is a chemical
fluid.
SEE OR SEARCH THIS CLASS, SUBCLASS:
SEE OR SEARCH CLASS:
| |||||||||||||
| 108 | Liquid crystal: | ||||
| This subclass is indented under subclass 106. Subject matter wherein the memory material is a liquid crystal, i.e., pneumatic
liquid crystal.
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| |||||
| 109 | Photoconductive and ferroelectric: | ||||||
| This subclass is indented under subclass 106. Subject matter wherein the memory element has both photoconductive and ferroelectric properties
and/or materials.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||||||
| 110 | Electroluminescent and photoconductive: | ||||
| This subclass is indented under subclass 106. Subject matter wherein the memory element has both solid-state
electroluminescent and photoconductive properties and/or
materials.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||||
| 111 | Electroluminescent: | ||||||||||
| This subclass is indented under subclass 106. Subject matter wherein the storage material is a solid-state
electroluminescent material.
SEE OR SEARCH THIS CLASS, SUBCLASS:
SEE OR SEARCH CLASS:
| |||||||||||
| 112 | Photoconductive: | ||||
| This subclass is indented under subclass 106. Subject matter wherein the storage material is a photoconductive
material.
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| |||||
| 113 | Amorphous: | ||||
| This subclass is indented under subclass 106. Subject matter wherein the storage material can be changed
from a crystalline (ordered) structure to an amorphous (disordered) structure
by means of radiant energy.
SEE OR SEARCH THIS CLASS, SUBCLASS:
SEE OR SEARCH CLASS:
| |||||
| 114 | Semiconductive: | ||
| This subclass is indented under subclass 106. Subject matter wherein the storage material is a semiconductor.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
| 115 | Diodes: | ||
| This subclass is indented under subclass 114. Subject matter wherein the semiconductive storage device
includes one or more diodes.
SEE OR SEARCH CLASS:
| |||
| 116 | Plasma: | ||||||
| This subclass is indented under subclass 106. Subject matter wherein the storage element is a gaseous
discharge device.
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| |||||||
| 117 | Ferroelectric: | ||||||||
| This subclass is indented under subclass 106. Subject matter wherein the storage element is a ferroelectric
material.
SEE OR SEARCH THIS CLASS, SUBCLASS:
SEE OR SEARCH CLASS:
| |||||||||
| 118 | Electron beam: | ||||||||||||||||||
This subclass is indented under subclass 106. Subject matter wherein the memory material has its state
changed by radiant energy which is an electron beam.
SEE OR SEARCH THIS CLASS, SUBCLASS:
SEE OR SEARCH CLASS:
| |||||||||||||||||||
| 119 | Color centers: | ||||
| This subclass is indented under subclass 106. Subject matter wherein the memory material is a crystal
containing local imperfections, which will absorb (or
generate) light of a particular frequency (color) depending
on the energy level of the electron at the imperfection.
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| |||||
| 120 | INFORMATION MASKING: | ||||||||||||||
| This subclass is indented under the class definition. Subject matter wherein a radiant beam is altered as a function
of the information stored, e.g., light
beam used to read information stored as transparent and opaque areas
in a memory element.
SEE OR SEARCH THIS CLASS, SUBCLASS:
SEE OR SEARCH CLASS:
| |||||||||||||||
| 121 | Polarization: | ||||
| This subclass is indented under subclass 120. Subject matter wherein the polarization of the radiation
beam is altered as a function of the information stored.
SEE OR SEARCH THIS CLASS, SUBCLASS:
SEE OR SEARCH CLASS:
| |||||
| 122 | Magneto-optical: | ||
| This subclass is indented under subclass 121. Subject matter wherein the polarization is altered by a
memory material which has magneto-optic properties.
SEE OR SEARCH CLASS:
| |||
| 123 | Bragg cells: |
| This subclass is indented under subclass 120. Subject matter wherein a Bragg cell is used to diffract a light beam into plural light beams. | |
| 124 | Diffraction: | ||||
| This subclass is indented under subclass 120. Subject matter wherein the radiation beam is diffracted
as a function of the information stored.
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| |||||
| 125 | Holograms: | ||||||
| This subclass is indented under subclass 124. Subject matter wherein object and reference beams are required
to store information.
SEE OR SEARCH THIS CLASS, SUBCLASS:
SEE OR SEARCH CLASS:
| |||||||
| 126 | Thermoplastic: | ||||
| This subclass is indented under subclass 120. Subject matter wherein the radiation beam is altered by
different thicknesses of a thermoplastic memory material.
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| |||||
| 127 | Transparency: | ||||||
| This subclass is indented under subclass 120. Subject matter wherein the radiation beam is altered by
the transparent and opaque areas of the memory material.
SEE OR SEARCH THIS CLASS, SUBCLASS:
SEE OR SEARCH CLASS:
| |||||||
| 128 | Electron beams: | ||||||||||||
| This subclass is indented under subclass 120. Subject matter wherein the radiation beam being altered
is an electron beam.
SEE OR SEARCH THIS CLASS, SUBCLASS:
SEE OR SEARCH CLASS:
| |||||||||||||
| 129 | SYSTEMS USING PARTICULAR ELEMENT: | ||||||||||||||||
| This subclass is indented under the class definition. Subject matter where the type of storage element used is
significant.
SEE OR SEARCH THIS CLASS, SUBCLASS:
SEE OR SEARCH CLASS:
| |||||||||||||||||
| 130 | Three-dimensional magnetic array: |
| This subclass is indented under subclass 129. Subject matter where the magnetic storage elements are arrayed in three dimensions. | |
| 131 | Two magnetic cells per bit: | ||
| This subclass is indented under subclass 129. Subject matter where two magnetic elements are used to store
a single bit of information.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
| 132 | Different size cores: |
| This subclass is indented under subclass 129. Subject matter where at least two of the magnetic elements in the system have different dimensions or a different number of winding turns. | |
| 133 | Cells of diverse coercivity: |
| This subclass is indented under subclass 129. Subject matter in which the material of different magnetic elements or the same magnetic element exhibits diverse magnetic properties. | |
| 134 | Continuous cells: | ||
| This subclass is indented under subclass 129. Subject matter where the magnetic element is composed of
a continuous material with a plurality of storage positions along
its length.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
| 135 | Elongated or bar-shaped cell: | ||
| This subclass is indented under subclass 134. Subject matter where the cross section of the magnetic storage
element is small compared to its length.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
| 136 | Twisters: |
| This subclass is indented under subclass 135. Subject matter where the magnetic storage element has an easy axis in the helical direction (approximately 45) or is a wire and is formed in the shape of a helix. | |
| 137 | Tubular: |
| This subclass is indented under subclass 135. Subject matter where the magnetic storage element is in the shape of a hollow tube. | |
| 138 | Chain: | ||
| This subclass is indented under subclass 135. Subject matter where the magnetic storage device is an elongated
element with circular aperture storage positions along its length.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
| 139 | Plated wire: | ||||||
This subclass is indented under subclass 135. Subject matter having a continuous element which is a nonmagnetic
wire or ribbon that is coated with a thin magnetic film.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||||||
| 140 | Multiaperture cell: | ||||
| This subclass is indented under subclass 129. Subject matter having a magnetic cell which contains two
or more apertures for storing information.
SEE OR SEARCH THIS CLASS, SUBCLASS:
SEE OR SEARCH CLASS:
| |||||
| 141 | Aperture plate: | ||
| This subclass is indented under subclass 140. Subject matter where a plurality of apertures in a magnetic
plate are in a common plane which formulates rows and columns.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
| 142 | Aperture with transverse axis: |
| This subclass is indented under subclass 140. Subject matter where the axes of the apertures of the multiaperture element are not parallel. | |
| 143 | Biax: |
| This subclass is indented under subclass 142. Subject matter where the axes of the aperture are perpendicular. | |
| 144 | Same size apertures: |
| This subclass is indented under subclass 140. Subject matter where all of the apertures of the multiaperture element are the same size. | |
| 145 | Ferroelectric: | ||||||||||||||||
| This subclass is indented under subclass 129. Subject matter where the storage element is ferroelectric.
SEE OR SEARCH THIS CLASS, SUBCLASS:
SEE OR SEARCH CLASS:
| |||||||||||||||||
| 146 | Electrets: | ||||||
| This subclass is indented under subclass 129. Subject matter in which the storage medium is an electret, that
is, an element which exhibits a permanent external electrostatic
field due to internal polarization.
SEE OR SEARCH THIS CLASS, SUBCLASS:
SEE OR SEARCH CLASS:
| |||||||
| 147 | Persistent internal polarization (PIP): | ||||
| This subclass is indented under subclass 129. Subject matter in which storage is effected and information
is represented by the persistent internal polarization by an established
electric field in a photoconductive dielectric medium, i.e., photoelectret.
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| |||||
| 148 | Resistive: | ||||||||||
| This subclass is indented under subclass 129. Subject matter in which the storage element is an electrically
resistive member.
SEE OR SEARCH THIS CLASS, SUBCLASS:
SEE OR SEARCH CLASS:
| |||||||||||
| 149 | Capacitors: | ||||||||||
| This subclass is indented under subclass 129. Subject matter in which the storage element is a capacitative
device.
SEE OR SEARCH THIS CLASS, SUBCLASS:
SEE OR SEARCH CLASS:
| |||||||||||
| 150 | Inherent: |
| This subclass is indented under subclass 149. Subject matter wherein the capacitor is the inherent capacitance of a circuit element. | |
| 151 | Molecular or atomic: | ||
| This subclass is indented under subclass 129. Subject matter in which information is stored at a molecular, atomic, a
subatomic level, or arrangement.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
| 152 | Nuclear induction or spin echo: |
| This subclass is indented under subclass 151. Subject matter which exploits nuclear induction spin echo capability for information storage and retrieval. | |
| 153 | Electrochemical: | ||||||||||||||||||||||||||
| This subclass is indented under subclass 129. Subject matter where an electrochemical material is used
for the storage and retrieval of information.
SEE OR SEARCH THIS CLASS, SUBCLASS:
SEE OR SEARCH CLASS:
| |||||||||||||||||||||||||||
| 154 | Flip-flop (electrical): | ||||||||||
| This subclass is indented under subclass 129. Subject matter in which the storage element is an electrical
bistable multivibrator.
SEE OR SEARCH THIS CLASS, SUBCLASS:
SEE OR SEARCH CLASS:
| |||||||||||
| 155 | Plural emitter or collector: | ||||||
| This subclass is indented under subclass 154. Subject matter in which the flip-flop is made up
of solid-state devices which have plural emitters or plural
collectors.
SEE OR SEARCH THIS CLASS, SUBCLASS:
SEE OR SEARCH CLASS:
| |||||||
| 156 | Complementary: | ||||||
| This subclass is indented under subclass 154. Subject matter employing devices having complementary (pnp
and npn) conductivity components.
SEE OR SEARCH THIS CLASS, SUBCLASS:
SEE OR SEARCH CLASS:
| |||||||
| 157 | Magnetostrictive or piezoelectric: | ||||||||
| This subclass is indented under subclass 129. Subject matter in which the storage element is magnetostrictive
or piezoelectric, that is, the shrinkage or expansion
of a material when placed in a magnetic or electric field, respectively.
SEE OR SEARCH THIS CLASS, SUBCLASS:
SEE OR SEARCH CLASS:
| |||||||||
| 158 | Magnetoresistive: | ||
| This subclass is indented under subclass 129. Subject matter in which the storage element changes in electrical
conductivity when a magnetic field is applied.
SEE OR SEARCH CLASS:
| |||
| 159 | Negative resistance: | ||||
| This subclass is indented under subclass 129. Subject matter in which the storage element exhibits negative
resistance.
SEE OR SEARCH THIS CLASS, SUBCLASS:
SEE OR SEARCH CLASS:
| |||||
| 160 | Superconductive: | ||||||||
| This subclass is indented under subclass 129. Subject matter in which the storage element is superconductive
in that it has a finite electrical resistance at particular (usually
normal) temperatures and magnetic field strength and zero resistance
at (usually) cryogenic temperatures and low field
strengths, the change of resistance or presence or absence
of current in the superconductor being used to signify information.
SEE OR SEARCH CLASS:
| |||||||||
| 161 | Thin film: |
| This subclass is indented under subclass 160. Subject matter in which the superconductor is in addition a thin film device. | |
| 162 | Josephson: | ||
| This subclass is indented under subclass 160. Subject matter in which information is stored as a function
of tunneling in a Josephson junction.
SEE OR SEARCH CLASS:
| |||
| 163 | Amorphous (electrical): | ||||
| This subclass is indented under subclass 129. Subject matter in which information is stored as a function
of the electrical condition of an amorphous material.
SEE OR SEARCH THIS CLASS, SUBCLASS:
SEE OR SEARCH CLASS:
| |||||
| 164 | Electrical contacts: | ||
| This subclass is indented under subclass 129. Subject matter in which information is stored as a function
of the condition (e.g., presence
or absence, opened or closed) of electrical contacts.
SEE OR SEARCH CLASS:
| |||
| 165 | Coherer: | ||
| This subclass is indented under subclass 164. Subject matter where storage device contacts are embedded
in a cohere material which is responsive to a current or pressure
by a physical change (usually from a solid coherent mass to
a powder) which effects a change in the material resistance.
SEE OR SEARCH CLASS:
| |||
| 166 | Relay: | ||||
| This subclass is indented under subclass 164. Subject matter in which the storage element is one or more
relays.
SEE OR SEARCH CLASS:
| |||||
| 167 | Simulating biological cells: | ||
| This subclass is indented under subclass 129. Subject matter in which information is stored in a device
which simulates the function of a living nerve cell.
SEE OR SEARCH CLASS:
| |||
| 168 | Ternary: |
| This subclass is indented under subclass 129. Subject matter which uses storage cells having three stable states. | |
| 169 | Gunn effect: | ||||||
| This subclass is indented under subclass 129. Subject matter in which the storage element is an electrical
shock wave responsive or generative device.
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| |||||||
| 170 | Hall effect: | ||||||||
| This subclass is indented under subclass 129. Subject matter in which the storage element or a component
of the storage element exhibits Hall effect characteristics.
SEE OR SEARCH CLASS:
| |||||||||
| 171 | Magnetic thin film: | ||||||
| This subclass is indented under subclass 129. Subject matter where the storage element is a thin film
cell which has a thickness of approximately 1 to 12,000
angstroms.
SEE OR SEARCH THIS CLASS, SUBCLASS:
SEE OR SEARCH CLASS:
| |||||||
| 172 | Isotropic: |
| This subclass is indented under subclass 171. Subject matter in which the thin film device has a plurality of easy axes of magnetization. | |
| 173 | Multiple magnetic storage layers: | ||||
This subclass is indented under subclass 171. Subject matter where information is stored in a plurality
of magnetic layers within the thin film device.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||||
| 174 | Semiconductive: | ||||||||
| This subclass is indented under subclass 129. Subject matter in which information is stored and retrieved
from a semiconductive material.
SEE OR SEARCH THIS CLASS, SUBCLASS:
SEE OR SEARCH CLASS:
| |||||||||
| 175 | Diodes: | ||||||||
| This subclass is indented under subclass 174. Subject matter in which the semiconductor storage element
is a diode.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||||||||
| 176 | Silicon on sapphire (SOS): |
| This subclass is indented under subclass 174. Subject matter in which the storage element is silicon on sapphire material. | |
| 177 | Bipolar and FET: | ||
| This subclass is indented under subclass 174. Subject matter in which bipolar and field effect transistors
are used together in a storage system.
SEE OR SEARCH CLASS:
| |||
| 178 | Ion implantation: | ||
| This subclass is indented under subclass 174. Subject matter in which the semiconductive storage member
is subjected to modification by ion implantation.
SEE OR SEARCH CLASS:
| |||
| 179 | Plural emitter or collector: | ||||
| This subclass is indented under subclass 174. Subject matter in which the semiconductive storage element
is either a plural emitter or a plural collector device.
SEE OR SEARCH THIS CLASS, SUBCLASS:
SEE OR SEARCH CLASS:
| |||||
| 180 | Four layer devices: | ||||||
| This subclass is indented under subclass 174. Subject matter in which four layer devices are used (e.g., pnpn
transistors).
SEE OR SEARCH CLASS:
| |||||||
| 181 | Complementary conductivity: | ||||||||
| This subclass is indented under subclass 174. Subject matter in which the storage elements are of complementary
conductivity (e.g., pnp plus
npn).
SEE OR SEARCH THIS CLASS, SUBCLASS:
SEE OR SEARCH CLASS:
| |||||||||
| 182 | Insulated gate devices: | ||||||
| This subclass is indented under subclass 174. Subject matter in which the storage element is an insulated
gate device (e.g., FET).
SEE OR SEARCH CLASS:
| |||||||
| 183 | Charge coupled: | ||||
| This subclass is indented under subclass 182. Subject matter in which the storage element is a charge
coupled device.
SEE OR SEARCH CLASS:
| |||||
| 184 | Variable threshold: |
| This subclass is indented under subclass 182. Subject matter in which the storage device is a FET transistor which has a variable threshold gate, e.g., MNOS. | |
| 185.01 | FLOATING GATE: | ||||
This subclass is indented under the class definition. Subject matter wherein a device stores and retrieves information
from a conductive insulated gate that indefinitely holds an amount of
charge having a specific polarity, and it is electrically
insulated and isolated from other parts of the device.
SEE OR SEARCH CLASS:
| |||||
| 185.02 | Disturbance control: |
| Subject matter under 185.01 wherein a threshold shifting effect is minimized from erasing, reading, and/or programming of a specific memory cell on any adjacent memory cells in the floating gate array. | |
| 185.03 | Multiple values (e.g., analog): | ||||
| Subject matter under 185.01 wherein the floating
gate device is adapted to store and operate on multiple-valued
electrical data signals.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||||
| 185.04 | Data security: | ||||||||||
Subject matter under 185.01 wherein the floating
gate device has an ability to secure or permanently preserve electric
data signals from being erased (e.g., by
tampering or overwriting) from memory cells.
SEE OR SEARCH THIS CLASS, SUBCLASS:
SEE OR SEARCH CLASS:
| |||||||||||
| 185.05 | Particular connection: | ||||||||||
Subject matter under 185.01 wherein the floating
gate device is enabled to form a connection or perform a switchable
function.
SEE OR SEARCH THIS CLASS, SUBCLASS:
SEE OR SEARCH CLASS:
| |||||||||||
| 185.06 | Segregated columns: |
| Subject matter under 185.05 wherein the connection within the floating gate device has separate source and drain lines for each column of memory cells, thereby each column’s source and drain lines are separate from and not shared with any other column’s source and drain lines. | |
| 185.07 | Cross-coupled cell: | ||||||
Subject matter under 185.05 wherein one or more
floating gate elements are directly wired in a cross-coupled
circuit.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||||||
| 185.08 | With volatile signal storage device: | ||||||||
Subject matter under 185.05 wherein the floating
gate device is directly connected to exchange a signal between a
separate volatile signal storage device and itself.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||||||||
| 185.09 | Error correction (e.g., redundancy, endurance): | ||||
Subject matter under 185.05 wherein the floating
gate device has a provision for the substitution of dysfunctional ("bad") cells, either initially
or from "wear-out" of an element or array, or
for prevention of the generation of bad cells.
SEE OR SEARCH CLASS:
| |||||
| 185.1 | Extended floating gate: | ||
Subject matter under 185.05 wherein two or more
spatially separated floating gate elements are connected by a common, extended
floating gate.
| |||
| 185.11 | Bank or block architecture: | ||||
Subject matter under 185.05 wherein a floating gate
array is divided into independently accessible groups of memory
cells.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||||
| 185.12 | Parallel row lines (e.g., page mode): | ||
Subject matter under 185.11 wherein one of the source
or drain lines in a floating gate array is parallel with the word (control
gate) line of a particular row so as to form a row of accessible architecture.
| |||
| 185.13 | Global word or bit lines: | ||
Subject matter under 185.11 wherein a word (control
gate) line or a data bit (drain) line
in a floating gate array extends through a plurality of banks or
blocks to form a common connection or connections for at least a
plurality of the banks or blocks of the entire floating gate array.
| |||
| 185.14 | Program gate: |
| Subject matter under 185.05 wherein an additional insulated gate separate from the control gate provides programming or erase functions. | |
| 185.15 | Weak inversion injection: | ||
Subject matter under 185.14 wherein use of an auxiliary
biased or floating gate to the source side of the main floating
gate induces a weak channel thereunder so as to create a hot electron
injection path in the channel for programming the main floating
gate.
| |||
| 185.16 | Virtual ground: | ||
Subject matter under 185.05 wherein all of the memory
cells in a column are connected in parallel by column lines, and
alternative column lines are either connected to ground or switchable
to a potential related to ground.
| |||
| 185.17 | Logic connection (e.g., NAND string): | ||||
Subject matter under 185.05 wherein the floating
gate elements are connected in a manner so as to form a logical
relationship.
SEE OR SEARCH CLASS:
| |||||
| 185.18 | Particular biasing: | ||
Subject matter under 185.01 wherein an operating
environment provides electrical settings to the floating gate device.
| |||
| 185.19 | Multiple pulses (e.g., ramp): | ||
Subject matter under 185.18 wherein the floating
gate has a particular biasing that comprises a series of pulses
or a pulse that varies at a constant rate.
| |||
| 185.2 | Reference signal (e.g., dummy cell): | ||||
Subject matter under 185.18 wherein a data signal
on the floating gate is compared to a threshold level or a fixed
signal that acts as a constant for comparison to the data signal.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||||
| 185.21 | Sensing circuitry (e.g., current mirror): | ||
| Subject matter under 185.2 wherein a detailed circuit
arrangement compares a data signal to the reference signal and delivers
a resulting output signal.
SEE OR SEARCH CLASS:
| |||
| 185.22 | Verify signal: |
| Subject matter under 185.2 including the use of any circuitry, procedure, or other means to verify that the data signal has been properly written or erased from a memory cell. | |
| 185.23 | Drive circuitry (e.g., word line driver): |
| Subject matter under 185.18 including logic, power, and switching circuitry necessary to drive a word line or bit line of the floating gate device into any of its operational modes. | |
| 185.24 | Threshold setting (e.g., conditioning): | ||
| Subject matter under 185.18 wherein a particular
process or means is used in a floating gate device to set the threshold
to a predetermined value during either programming or erasure.
SEE OR SEARCH CLASS:
| |||
| 185.25 | Line charging (e.g., precharge, discharge, refresh): |
| Subject matter under 185.18 wherein the floating gate device circuitry there is either a precharge, refresh, or a discharge of the bit lines. | |
| 185.26 | Floating electrode (e.g., source, control gate, drain): |
| Subject matter under 185.18 wherein one or more of the source, control gate, drain, or substrate of a floating gate device is left floating rather than being tied to a potential. | |
| 185.27 | Substrate bias: | ||||
Subject matter under 185.18 wherein the floating
gate device has a particular and significant biasing applied to
the substrate or isolated semiconductor well region.
SEE OR SEARCH CLASS:
| |||||
| 185.28 | Tunnel programming: | ||||
Subject matter under 185.18 wherein the floating
gate device is programmed through a thin insulated region that provides
a charge tunnel to the floating gate.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||||
| 185.29 | Erase: | ||
Subject matter under 185.18 wherein an arrangement
or process is provided for reducing the net charge on memory cells
on the floating gate.
| |||
| 185.3 | Over erasure: |
| Subject matter under 185.29 including the use of any circuitry or means to measure or prevent over erasure of memory cells (i.e., removal of more charge than is desired for a particular logic level setting). | |
| 185.31 | Nonsubstrate discharge: |
| Subject matter under 185.29 wherein the floating gate is erased by overlying electrodes or other means not directly connected to the substrate, and the charge carriers are not directly removed to the substrate. | |
| 185.32 | Radiation erasure: | ||
Subject matter under 185.31 wherein electromagnetic
wave energy is used to erase an electric charge on the floating
gate.
| |||
| 185.33 | Flash: | ||
Subject matter under 185.29 wherein the floating
gate is electrically erasable by block or bulk.
| |||
| 186 | Single device per bit: |
| This subclass is indented under subclass 174. Subject matter in which the storage element for one bit of information is composed of a single semiconductive device. | |
| 187 | Three devices per bit: |
| This subclass is indented under subclass 174. Subject matter in which the storage element for one bit of information is composed of three semiconductive devices. | |
| 188 | Four or more devices per bit: |
| This subclass is indented under subclass 174. Subject matter in which the storage element for one bit of information is composed of four or more semiconductive devices. | |
| 189.011 | READ/WRITE CIRCUIT: |
| This subclass is indented under the class definition. Subject matter for inserting, extracting, or handling of an information signal to be stored (write circuit) or retrieved (read circuit). | |
| 189.02 | Multiplexing: | ||||
| This subclass is indented under subclass 189.011. Subject matter which includes the transmission of plural
signals over a single signal path.
SEE OR SEARCH THIS CLASS, SUBCLASS:
SEE OR SEARCH CLASS:
| |||||
| 189.03 | Plural use of terminal: | ||||||||
This subclass is indented under subclass 189.011. Subject matter which has a terminal connecting the memory
to a data handling circuit and another diverse circuit.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||||||||
| 189.04 | Simultaneous operations (e.g., read/write): | ||||
| This subclass is indented under subclass 189.011. Subject matter including circuitry for performing multiple
operations (e.g., storing information
in and retrieving information from the memory) at the same
time.
SEE OR SEARCH THIS CLASS, SUBCLASS:
SEE OR SEARCH CLASS:
| |||||
| 189.05 | Having particular data buffer or latch: | ||||
| This subclass is indented under subclass 189.011. Subject matter including a specific detail of a temporary
storage circuit for a data signal.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||||
| 189.06 | Including signal clamping: | ||
| This subclass is indented under subclass 189.011. Subject matter including circuitry for limiting the variation
of a signal (e.g., voltage) in
order to keep such variation at a predetermined level.
SEE OR SEARCH CLASS:
| |||
| 189.07 | Including signal comparison: | ||||||
| This subclass is indented under subclass 189.011. Subject matter including circuitry to compare plural signal
in order to control an operation of the system on a data signal.
SEE OR SEARCH THIS CLASS, SUBCLASS:
SEE OR SEARCH CLASS:
| |||||||
| 189.08 | Including specified plural element logic arrangement: | ||
| This subclass is indented under subclass 189.011. Subject matter describing the configuration of multiple
logic devices which handle the information signal.
SEE OR SEARCH CLASS:
| |||
| 189.09 | Including reference or bias voltage generator: | ||||||
| This subclass is indented under subclass 189.011. Subject matter including a particular voltage or bias source.
SEE OR SEARCH THIS CLASS, SUBCLASS:
SEE OR SEARCH CLASS:
| |||||||
| 189.11 | Including level shift or pull-up circuit: | ||||
| This subclass is indented under subclass 189.011. Subject matter including a circuit element which makes an
adjustment in the voltage level of an information signal to enhance
driving capability.
SEE OR SEARCH CLASS:
| |||||
| 189.12 | With shift register: | ||||||||
| This subclass is indented under subclass 189.011. Subject matter including a circuit which sequentially shifts
the data information signal between one element and another in a memory
array in a serial manner.
SEE OR SEARCH THIS CLASS, SUBCLASS:
SEE OR SEARCH CLASS:
| |||||||||
| 189.14 | Common read and write circuit: |
| This subclass is indented under subclass 189.011. Subject matter including a circuit for controlling both reading and writing of data signal from/to a memory location. | |
| 189.15 | Particular read circuit: |
| This subclass is indented under subclass 189.011. Subject matter including a circuit for controlling reading of data signal from a memory location. | |
| 189.16 | Particular write circuit: |
| This subclass is indented under subclass 189.011. Subject matter including a circuit for controlling writing of data signal to a memory location. | |
| 189.17 | Data transfer circuit: |
| This subclass is indented under subclass 189.011. Subject matter including a circuit that connects between two storage locations (e.g., two memory arrays or memory blocks) for transferring data between them. | |
| 189.18 | Bidirectional bus: |
| This subclass is indented under subclass 189.011. Subject matter wherein data input/output lines are used for both reading and writing of data. | |
| 189.19 | Separate read and write bus: |
| This subclass is indented under subclass 189.011. Subject matter wherein each of read and write bus is unidirectional. | |
| 189.2 | Using different memory types: |
| This subclass is indented under subclass 189.011. Subject matter including a bus interface circuit between independent memory types (e.g., DRAM and SRAM). | |
| 190 | For complementary information: | ||||||
| This subclass is indented under subclass 189.011. Subject matter wherein the read/write circuit is
used with a memory cell containing complementary information.
SEE OR SEARCH THIS CLASS, SUBCLASS:
SEE OR SEARCH CLASS:
| |||||||
| 191 | Signals: | ||
| This subclass is indented under subclass 189.011. Subject matter where particular signals are used for writing, maintaining, or
reading information.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
| 192 | Radio frequency: |
| This subclass is indented under subclass 191. Subject matter where the particular signal is a radio frequency signal. | |
| 193 | Strobe: |
| This subclass is indented under subclass 191. Subject matter where the particular signal is used for strobing the memory device. | |
| 194 | Delay: | ||||
| This subclass is indented under subclass 191. Subject matter where the particular signal is delayed during
writing or reading.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||||
| 195 | Inhibit: |
| This subclass is indented under subclass 191. Subject matter where an inhibit operation is used to prevent the writing or reading of information. | |
| 196 | Sense/inhibit: |
| This subclass is indented under subclass 195. Subject matter where the same conductor is used for both an inhibit operation and a sensing operation during different time periods. | |
| 197 | Microwave: |
| This subclass is indented under subclass 191. Subject matter where the particular signal is in the microwave range. | |
| 198 | Transmission: | ||
| This subclass is indented under subclass 191. Subject matter where transmission line signals and principles
are used for writing or reading information.
SEE OR SEARCH CLASS:
| |||
| 199 | Coincident A.C. signal with pulse: |
| This subclass is indented under subclass 191. Subject matter where the particular signal is the combination of an A.C. signal and pulse signal. | |
| 200 | Bad bit: | ||
| This subclass is indented under subclass 189.011. Subject matter in which erroneous, defective, or
partially defective storage locations are used to store information.
SEE OR SEARCH CLASS:
| |||
| 201 | Testing: | ||||||
| This subclass is indented under subclass 189.011. Subject matter including the specifics of the memory which
are tested for defects or erroneous information.
SEE OR SEARCH THIS CLASS, SUBCLASS:
SEE OR SEARCH CLASS:
| |||||||
| 202 | Complementing/balancing: | ||
| This subclass is indented under subclass 189.011. Subject matter in which complementing or balancing signals
are used in a read/write circuit, e.g., a storage system
having an auxiliary storage circuit for complementary signals to
be used for noise cancellation.
SEE OR SEARCH CLASS:
| |||
| 203 | Precharge: | ||||||
| This subclass is indented under subclass 189.011. Subject matter wherein circuit lines or elements are charged
(or discharged) to a desired level just prior to reading or writing information.
SEE OR SEARCH THIS CLASS, SUBCLASS:
SEE OR SEARCH CLASS:
| |||||||
| 204 | Accelerating charge or discharge: | ||||||||
| This subclass is indented under subclass 189.011. Subject matter wherein a circuit senses a charging (or discharging)
operation and switches in a parallel path to decrease the charging
(or discharging) time.
SEE OR SEARCH THIS CLASS, SUBCLASS:
SEE OR SEARCH CLASS:
| |||||||||
| 205 | Flip-flop used for sensing: | ||||||||
| This subclass is indented under subclass 189.011. Subject matter wherein the sensing circuit is a flip-flop
circuit.
SEE OR SEARCH THIS CLASS, SUBCLASS:
SEE OR SEARCH CLASS:
| |||||||||
| 206 | Noise suppression: |
| This subclass is indented under subclass 189.011. Subject matter having circuits for the cancellation or reduction of noise or spurious signals. | |
| 207 | Differential sensing: |
| This subclass is indented under subclass 189.011. Subject matter includes a circuit for detecting the difference between two voltage or current levels. | |
| 208 | Semiconductors: |
| This subclass is indented under subclass 207. Subject matter where the differential sensing is performed upon a semiconductor memory element. | |
| 209 | Magnetic: |
| This subclass is indented under subclass 207. Subject matter where the differential sensing is performed upon a magnetic memory element. | |
| 210.1 | Reference or dummy element: |
| This subclass is indented under subclass 207. Subject matter including an additional cell that is used as a reference during the differential sensing. | |
| 210.11 | Compensate signal: |
| This subclass is indented under subclass 210.1. Subject matter wherein the output signal from an additional (reference) circuit is used to offset undesired voltage variations. | |
| 210.12 | Voltage setting: |
| This subclass is indented under subclass 210.1. Subject matter wherein a reference voltage is selected according to storage levels or operation modes. | |
| 210.13 | Common bit line: |
| This subclass is indented under subclass 210.1. Subject matter wherein a reference cell shares the same bit/data line with a storage element. | |
| 210.14 | Plural elements per reference cell: |
| This subclass is indented under subclass 210.1. Subject matter wherein a reference cell has more than one electronic components (e.g., containing a combination of transistors, capacitors, resistors, fuse, etc.). | |
| 210.15 | Structural component of a reference cell: |
| This subclass is indented under subclass 210.1. Subject matter including the structure of the electronic component (e.g., transistor, resistor, capacitor, fuse, etc.) that makes up a reference cell. | |
| 211 | Temperature compensation: |
| This subclass is indented under subclass 206. Subject matter where the circuit used is for compensating temperature changes. | |
| 212 | Semiconductor: |
| This subclass is indented under subclass 211. Subject matter where the temperature compensation is performed upon a semiconductor memory element. | |
| 213 | Magnetic: |
| This subclass is indented under subclass 211. Subject matter where the temperature compensation is performed upon a magnetic memory element. | |
| 214 | Particular wiring: | ||
| This subclass is indented under subclass 206. Subject matter where the circuit includes wiring the elements
in a particular arrangement to obtain noise cancellation.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
| 215 | Optical: | ||||
| This subclass is indented under subclass 189.011. Subject matter in which the read/write circuit
if for an optical storage system.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||||
| 216 | Holographic: | ||||||
| This subclass is indented under subclass 215. Subject matter wherein the circuit is used to read/write
holographic memories.
SEE OR SEARCH THIS CLASS, SUBCLASS:
SEE OR SEARCH CLASS:
| |||||||
| 217 | Electron beam: | ||
| This subclass is indented under subclass 189.011. Subject matter in which the read/write circuit
is for an electron beam storage system.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
| 218 | Erase: |
| This subclass is indented under subclass 189.011. Subject matter in which the read/write circuit is or includes an erase circuit for a storage system. | |
| 219 | SiPo/PiSo: | ||||
| This subclass is indented under subclass 189.011. Subject matter in which the read/write circuit
for memory provides Serial Input with Parallel Output or Parallel
Input with Serial Output.
SEE OR SEARCH THIS CLASS, SUBCLASS:
SEE OR SEARCH CLASS:
| |||||
| 220 | Parallel read/write: | ||
| This subclass is indented under subclass 189.011. Subject matter wherein information is written into a memory
in parallel form and read out in parallel form.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
| 221 | Serial read/write: | ||
| This subclass is indented under subclass 189.011. Subject matter wherein information is written into a memory
in serial form and read out in serial form.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
| 222 | Data refresh: | ||||
| This subclass is indented under subclass 189.011. Subject matter wherein decaying information is read before
it becomes unrecognizable, and rewritten in original form, e.g., charge
on a capacitor is read before too much has leaked off, then rewritten
to a fully charged state.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||||
| 223 | Bridge: | ||||||
| This subclass is indented under subclass 189.011. Subject matter where the sensing circuit is in the form
of a bridge circuit.
SEE OR SEARCH CLASS:
| |||||||
| 224 | Eddy current: | ||
| This subclass is indented under subclass 189.011. Subject matter having circuits containing Eddy currents.
SEE OR SEARCH CLASS:
| |||
| 225 | Minor loop: | ||
This subclass is indented under subclass 189.011. Subject matter where the read/write circuit results
in the operation of a magnetic memory element or any hysteresis
loop other than the major loop.
| |||
| 225.5 | Including magnetic element: | ||||||||||
| This subclass is indented under subclass 189.011. Subject matter including a semiconductor element having
plural potential barriers (i.e., junctions).
SEE OR SEARCH THIS CLASS, SUBCLASS:
SEE OR SEARCH CLASS:
| |||||||||||
| 225.6 | Having bipolar circuit element: | ||||||
This subclass is indented under subclass 189.011. Subject matter including a semiconductor element having
plural potential barriers (i.e., junctions).
SEE OR SEARCH CLASS:
| |||||||
| 225.7 | Having fuse element: | ||||||||||||
| This subclass is indented under subclass 189.011. Subject matter wherein the circuit includes a circuit element
which is selectively melted or disintegrated to make or break an electric
circuit to control the operating characteristics of a memory read
or write circuit.
SEE OR SEARCH THIS CLASS, SUBCLASS:
SEE OR SEARCH CLASS:
| |||||||||||||
| 226 | POWERING: | ||
This subclass is indented under the class definition. Subject matter having powering concepts relating to memories.
| |||
| 227 | Conservation of power: |
| This subclass is indented under subclass 226. Subject matter having means for reduction of operational power during the memory standby phase. | |
| 228 | Data preservation: | ||
| This subclass is indented under subclass 226. Subject matter which includes concepts relevant to prevention
of loss of data in a storage device, e.g., prevention of data loss
by provision of backup storage means.
SEE OR SEARCH CLASS:
| |||
| 229 | Standby power: |
| This subclass is indented under subclass 228. Subject matter in which data loss is prevented by using a secondary (standby) power supply during housepower interruptions. | |
| 230.01 | ADDRESSING: | ||||||||||
| This subclass is indented under the class definition. Subject matter including selection of a memory location.
SEE OR SEARCH THIS CLASS, SUBCLASS:
SEE OR SEARCH CLASS:
| |||||||||||
| 230.02 | Multiplexing: | ||||
| This subclass is indented under subclass 230.01. Subject matter which includes the transmission of plural
signals over a single signal path.
SEE OR SEARCH THIS CLASS, SUBCLASS:
SEE OR SEARCH CLASS:
| |||||
| 230.03 | Plural blocks or banks: | ||
| This subclass is indented under subclass 230.01. Subject matter in which the memory elements are arranged
in plural separate and distinct groups and in which at least one
element from one of the groups is selectively accessed.
SEE OR SEARCH CLASS:
| |||
| 230.04 | Alternate addressing (e.g., even/odd): |
| This subclass is indented under subclass 230.03. Subject matter which successively addresses memory elements in different blocks or banks. | |
| 230.05 | Multiple port access: | ||
| This subclass is indented under subclass 230.01. Subject matter having plural address circuits for independent
memory access.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
| 230.06 | Particular decoder or driver circuit: | ||||
This subclass is indented under subclass 230.01. Subject matter including a detail of a circuit which either
changes a binary combination of memory address signals to form a
selection or actuation signal, or which increases the magnitude
of such an actuation signal.
SEE OR SEARCH CLASS:
| |||||
| 230.07 | Including magnetic element: | ||||||||||
| This subclass is indented under subclass 230.06. Subject matter in which a memory decoder or driver circuit
includes a magnetic element.
SEE OR SEARCH THIS CLASS, SUBCLASS:
SEE OR SEARCH CLASS:
| |||||||||||
| 230.08 | Including particular address buffer or latch circuit arrangement: | ||
| This subclass is indented under subclass 230.01. Subject matter including a detail of a temporary storage
device for an address and selection signal.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
| 230.09 | Combined random and sequential addressing: |
| This subclass is indented under subclass 230.01. Subject matter including switching to permit the access to the storage elements either selectively or successively. | |
| 231 | Using selective matrix: | ||
| This subclass is indented under subclass 230.01. Subject matter where at least a single matrix is used to
select a memory location.
SEE OR SEARCH CLASS:
| |||
| 232 | Magnetic: |
| This subclass is indented under subclass 231. Subject matter where the elements of the selective matrix are magnetic. | |
| 233.1 | Sync/clocking: |
| This subclass is indented under subclass 230.01. This subclass is intended Subject matter where a circuit that generates a clock signal for controlling a memory cell and/or a circuit that makes a clock cycle occurring in a predetermined time sequence or in phase, is used to select a memory location. | |
| 233.11 | Plural clock signals: |
| This subclass is indented under subclass 233.1. Subject matter where there are two or more clock signals. | |
| 233.12 | External clock signal modification: |
| This subclass is indented under subclass 233.1. Subject matter wherein an external clock signal is adjusted. | |
| 233.13 | DDR (double data rate) memory: |
| This subclass is indented under subclass 233.1. Subject matter wherein a data memory reads or writes on a low to high transition of a clock signal and an opposite transition. | |
| 233.14 | Initiating signal: |
| This subclass is indented under subclass 233.1. Subject matter wherein a signal is used for activating an operational mode. | |
| 233.15 | Standby signal: |
| This subclass is indented under subclass 233.1. Subject matter wherein a clock signal is used for initiating a pause or power down mode. | |
| 233.16 | Write mode signal only: |
| This subclass is indented under subclass 233.1. Subject matter wherein a clock signal is used to control or start a write operation only. | |
| 233.17 | Read mode signal only: |
| This subclass is indented under subclass 233.1. Subject matter wherein a clock signal is used to control or start a read operation only. | |
| 233.18 | Burst mode signal: |
| This subclass is indented under subclass 233.1. Subject matter a clock signal is used for transferring a group of data. | |
| 233.19 | Common read and write mode signal: |
| This subclass is indented under subclass 233.1. Subject matter wherein a clock signal is used to control or start both read and write operation. | |
| 233.5 | Transition detection: |
| This subclass is indented under subclass 233.1. Subject matter which generates a clock or timing signal responsive to a change in an input signal. | |
| 234 | Optical: | ||
| This subclass is indented under subclass 230.01. Subject matter having circuits for deflecting an optical
beam to a particular memory location.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
| 235 | Page memories: | ||||||||
| This subclass is indented under subclass 234. Subject matter wherein memory locations in a plane are addressed
simultaneously.
SEE OR SEARCH THIS CLASS, SUBCLASS:
SEE OR SEARCH CLASS:
| |||||||||
| 236 | Counting: | ||||||
| This subclass is indented under subclass 230.01. Subject matter wherein a memory location is addressed by
counting locations to determine when the selected one is reached, e.g.,
counting matrix rows to address the desired row.
SEE OR SEARCH THIS CLASS, SUBCLASS:
SEE OR SEARCH CLASS:
| |||||||
| 237 | Electron beam: | ||||||
| This subclass is indented under subclass 230.01. Subject matter for addressing a memory device with an electron
beam.
SEE OR SEARCH THIS CLASS, SUBCLASS:
SEE OR SEARCH CLASS:
| |||||||
| 238 | Cartesian memories: | ||||
| This subclass is indented under subclass 230.01. Subject matter wherein all columns (or rows) of
a memory plane are addressed simultaneously.
SEE OR SEARCH THIS CLASS, SUBCLASS:
SEE OR SEARCH CLASS:
| |||||
| 238.5 | Byte or page addressing: | ||||||||
This subclass is indented under subclass 230.01. Subject matter which addresses a group of memory elements
or a plurality of such groups as a single unit.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||||||||
| 239 | Sequential: | ||||
| This subclass is indented under subclass 230.01. Subject matter where the memory locations are sequenced
one after another in an addressing circuit.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||||
| 240 | Using shift register: |
| This subclass is indented under subclass 239. Subject matter where the means for sequencing is a shift register. | |
| 241 | Detectors: |
| This subclass is indented under subclass 239. Subject matter where the memory locations are detected one after another. | |
| 242 | Current steering: |
| This subclass is indented under subclass 230.01. Subject matter having means for determining a current or voltage path to select a memory location. | |
| 243 | Diode: |
| This subclass is indented under subclass 242. Subject matter where the means is a diode(s). | |
| 243.5 | Including magnetic element: | ||||||||||
| This subclass is indented under subclass 230.01. Subject matter in which an address circuit includes a magnetic
element.
SEE OR SEARCH THIS CLASS, SUBCLASS:
SEE OR SEARCH CLASS:
| |||||||||||
| 244 | MISCELLANEOUS: |
| This subclass is indented under the class definition. Subject matter not provided for above. | |
The definitions below correspond to abolished subclasses from which these collections were formed. See the Foreign Art Collection schedule of this class for specific correspondences. [Note: The titles and definitions for indented art collections include all the details of the one(s) that are hierarchically superior.] | |||
| FOR 100 | ASSOCIATIVE MEMORIES: | ||
| Foreign art collection where the information is retrieved based on content rather than location; associative memories are also referred to as content or tag memories. | |||
| FOR 101 | READ/WRITE CIRCUIT: | ||
Foreign art collection for inserting, extracting,
or handling of an information signal to be stored or retrieved.
| |||
| FOR 102 | Reference or dummy elements: | ||
| Foreign art collection where the magnetic differential sensing circuit uses an additional magnetic element. | |||
| FOR 103 | Sync/clocking: | ||
| Foreign art collection where synchronizing and clocking circuits are used to select a memory location. | |||